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論文誌

[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs, and 28-nm Planar SRAMs and Register Files," IEEE Transactions on Nuclear Science, 採録済.

[2] K. Takami, Y. Gomi, R. Yasuda, S. Abe, M. Itoh, H. Kanda, M. Fukuda, and M. Hashimoto, "Validating Terrestrial SER in 12-, 28- and 65-nm SRAMs Estimated by Simulation Coupled with One-Time Neutron Irradiation," IEEE Transactions on Nuclear Science, volume 72, number 8, pages 2622-2628, August 2025. [pdf]

[3] Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, "Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 71, number 4, pages 912-920, April 2024. [pdf]

[4] T. Kato, M. Tampo, S. Takeshita, H. Tanaka, H. Matsuyama, M. Hashimoto, and Y. Miyake, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha Particles," IEEE Transactions on Nuclear Science, volume 68, number 7, pages 1436-1444, July 2021. [pdf]

[5] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65 nm Bulk SRAMs with DC Muon Beam at RCNP MuSIC Facility," IEEE Transactions on Nuclear Science, volume 67, number 7, 1555 -- 1559, July 2020. [pdf]

[6] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1566 -- 1572, July 2020. [pdf]

[7] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," IEEE Transactions on Nuclear Science, volume 67, number 7, 1599 -- 1605, July 2020. [pdf]

[8] T. Kato, M. Hashimoto, and H. Matsuyama, "Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs with Comparison to 20-nm Planar SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1485 -- 1493, July 2020. [pdf]

[9] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1374 -- 1380, July 2019. [pdf]

[10] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1398 -- 1403, July 2019. [pdf]

[11] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, S. Abe, K. Hamada, M. Tampo, and Y. Miyake, "Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1742--1749, August 2018. [pdf]

[12] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1734--1741, August 2018. [pdf]

[13] S. Hirokawa, R. Harada, M. Hashimoto, and T. Onoye, "Characterizing Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4-V SRAMs," IEEE Transactions on Nuclear Science, volume 62, number 2, pages 420--427, April 2015. [219.pdf]

国際会議

[1] Y. Gomi, K. Takami, R. Yasuda, H. Kanda, M. Fukuda, and M. Hashimoto, "Quasi Event-Wise Measurement of Neutron-Induced Multiple-Cell Upsets in 22-nm and 55-nm SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), 採録済.

[2] M. Hashimoto, "Characterization and Understanding of Cosmic Ray-Induced Soft Errors in SRAMs," Proceedings of International Meeting for Future of Electron Devices, Kansai, November 2024. [pdf]

[3] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2024.

[4] K. Takami, Y. Gomi, R. Yasuda, S. Abe, M. Itoh, H. Kanda, M. Fukuda, and M. Hashimoto, "Validating Terrestrial SER in 12- and 28-nm SRAMs Estimated by Simulation Coupled with One-Time Neutron Irradiation," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2024.

[5] K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. [pdf]

[6] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.

[7] K. Takami, Y. Gomi, S. Abe, W. Liao, S. Manabe, T. Matsumoto, and M. Hashimoto, "Characterizing SEU Cross Sections of 12- and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV Neutrons," Proceedings of International Reliability Physics Symposium (IRPS), March 2023. [pdf]

[8] T. Kato, M. Tampo, S. Takeshita, Y. Miyake, H Tanaka, and M. Hashimoto, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha-Particles," IEEE Nuclear and Space Radiation Effects Conference (NSREC), November 2020.

[9] W. Liao, K. Ito, Y. Mitsuyama, and M. Hashimoto, "Characterizing Energetic Dependence of Low-Energy Neutron-Induced MCUs in 65 nm Bulk SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2020. [pdf]

[10] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65-nm Bulk SRAMs with DC Muon Beam at RCNP-MuSIC Facility," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[11] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm Bulk SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[12] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]

[13] M. Hashimoto, W. Liao, S. Manabe, and Y. Watanabe, "Characterizing Soft Error Rates of 65-nm SOTB and Bulk SRAMs with Muon and Neutron Beams (Invited)," Proceedings of SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), October 2018. [pdf]

[14] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[15] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[16] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon Induced Upsets in 65nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.

[17] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Momentum and Supply Voltage Dependencies of SEUs Induced by Low-Energy Negative and Positive Muons in 65-nm UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.

[18] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.

[19] R. Harada, S. Hirokawa, and M. Hashimoto, "Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4 V SRAMs," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2014.