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K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. | |
ID | 627 |
分類 | 国際会議 |
タグ | bulk cross dependence finfet let model planar reproducing section seu srams voltage |
表題 (title) |
An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs |
表題 (英文) |
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著者名 (author) |
K. Takeuchi,T. Kato,M. Hashimoto |
英文著者名 (author) |
,T. Kato,M. Hashimoto |
キー (key) |
,T. Kato,M. Hashimoto |
定期刊行物名 (journal) |
Proceedings of International Symposium on Reliability Physics (IRPS) |
定期刊行物名 (英文) |
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巻数 (volume) |
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号数 (number) |
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ページ範囲 (pages) |
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刊行月 (month) |
4 |
出版年 (year) |
2024 |
Impact Factor (JCR) |
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URL |
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付加情報 (note) |
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注釈 (annote) |
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内容梗概 (abstract) |
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論文電子ファイル | pdf (application/pdf) [一般閲覧可] |
BiBTeXエントリ |
@article{id627, title = {An {SEU} Cross Section Model Reproducing {LET} and Voltage Dependence in Bulk Planar and {FinFET} {SRAMs}}, author = {K. Takeuchi and T. Kato and M. Hashimoto}, journal = {Proceedings of International Symposium on Reliability Physics (IRPS)}, month = {4}, year = {2024}, } |