この検索内の頻出タグ: characterization^:5 srams^:3 20-nm^:2 comparative^:2 muon-induced^:2 neutrons^:2 single-event^:2 upsets^:2 0.3v^:1 alpha^:1 alpha-particles^:1 analysis^:1 bulk^:1 chalcogenide^:1 crossbar^:1 fpga^:1 mcu^:1 modulation^:1 nbti^:1 neutron-induced^:1 nonvolatile^:1 operation^:1 particles^:1 pulse-width^:1 rate^:1 selectors^:1 seu^:1 sotb^:1 switch^:1 used^:1

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論文誌

[1] T. Kato, M. Tampo, S. Takeshita, H. Tanaka, H. Matsuyama, M. Hashimoto, and Y. Miyake, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha Particles," IEEE Transactions on Nuclear Science, volume 68, number 7, pages 1436-1444, July 2021. [pdf]

国際会議

[1] T. Kato, M. Tampo, S. Takeshita, Y. Miyake, H Tanaka, and M. Hashimoto, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha-Particles," IEEE Nuclear and Space Radiation Effects Conference (NSREC), November 2020.

[2] H. Numata, N. Banno, K. Okamoto, N. Iguchi, H. Hada, M. Hashimoto, T. Sugibayashi, T. Sakamoto, and M. Tada, "Characterization of Chalcogenide Selectors for Crossbar Switch Used in Nonvolatile FPGA," Proceedings of Silicon Nanoelectronics Workshop, June 2019. [pdf]

[3] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.

[4] R. Harada, M. Hashimoto, and T. Onoye, "NBTI Characterization Using Pulse-Width Modulation," IEEE/ACM Workshop on Variability Modeling and Characterization, November 2013.