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論文誌

[1] Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, "Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 71, number 4, pages 912-920, April 2024. [pdf]

[2] T. Kato, M. Tampo, S. Takeshita, H. Tanaka, H. Matsuyama, M. Hashimoto, and Y. Miyake, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha Particles," IEEE Transactions on Nuclear Science, volume 68, number 7, pages 1436-1444, July 2021. [pdf]

[3] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1566 -- 1572, July 2020. [pdf]

[4] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1398 -- 1403, July 2019. [pdf]

[5] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, S. Abe, K. Hamada, M. Tampo, and Y. Miyake, "Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1742--1749, August 2018. [pdf]

[6] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1734--1741, August 2018. [pdf]

国際会議

[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.

[2] M. Niikura, R. Mizuno, S. Manabe, T. Y. Saito, T. Matsuzaki, S. Abe, H. Fukuda, M. Hashimoto, K. Ishida, A. Hillier, N. Kawamura, Y. Kawashima, S. Kawase, T. Kawata, K. Kitafuji, F. Minato, M. Oishi, P. Strasser, A. Sato, K. Shimomura, S. Takeshita, M. Tampo, D. Tomono, I. Umegaki, Y. Yamaguchi, and Y. Watanabe, "Nuclear Physics for Muon-Induced Soft Error," Workshop for Computational Technique for Negative Muon Spectroscopy and Elemental Analysis, August 2023.

[3] R. Mizuno, M. Niikura, T. Y. Saito, S. Abe, H. Fukuda, M. Hashimoto, K. Ishida, N. Kawamura, S. Kawase, T. Matsuzaki, M. Oishi, P. Strasser, A. Sato, K. Shimomura, S. Takeshita, and I. Umegaki, "Measurement of Muon-Induced Nuclear Transmutation for Si Isotopes," Trans-scale Quantum Science Institute, November 2022.

[4] T. Kato, M. Tampo, S. Takeshita, Y. Miyake, H Tanaka, and M. Hashimoto, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha-Particles," IEEE Nuclear and Space Radiation Effects Conference (NSREC), November 2020.

[5] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of Incident Angle on Negative Muon-Induced SEU Cross Section of 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[6] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]

[7] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.