この検索内の頻出タグ: srams^:6 finfet^:5 12-nm^:4 planar^:4 seu^:4 muon-induced^:3 28-nm^:2 analysis^:2 cell^:2 cross^:2 different^:2 simulation^:2 types^:2 20-nm^:1 angular^:1 bulk^:1 comparison^:1 dependence^:1 files^:1 let^:1 model^:1 neutron-induced^:1 register^:1 reproducing^:1 section^:1 sections^:1 sensitivity^:1 single-event^:1 upsets^:1 voltage^:1

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論文誌

[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs, and 28-nm Planar SRAMs and Register Files," IEEE Transactions on Nuclear Science, 採録済.

[2] T. Kato, M. Hashimoto, and H. Matsuyama, "Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs with Comparison to 20-nm Planar SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1485 -- 1493, July 2020. [pdf]

国際会議

[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2024.

[2] K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. [pdf]

[3] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.