この検索内の頻出タグ: srams^:6 28-nm^:5 seu^:4 cross^:3 muon-induced^:3 planar^:3 sections^:3 12-^:2 12-nm^:2 finfet^:2 simulation^:2 14.8^:1 6.0^:1 65-nm^:1 8.0^:1 analysis^:1 bulk^:1 cell^:1 characterizing^:1 cmos^:1 coupled^:1 different^:1 estimated^:1 files^:1 irradiation^:1 mev^:1 negative^:1 neutron^:1 neutrons^:1 one-time^:1

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論文誌

[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs, and 28-nm Planar SRAMs and Register Files," IEEE Transactions on Nuclear Science, 採録済.

国際会議

[1] K. Takami, Y. Gomi, R. Yasuda, S. Abe, M. Itoh, H. Kanda, M. Fukuda, and M. Hashimoto, "Validating Terrestrial SER in 12- and 28-nm SRAMs Estimated by Simulation Coupled with One-Time Neutron Irradiation," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2024.

[2] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.

[3] K. Takami, Y. Gomi, S. Abe, W. Liao, S. Manabe, T. Matsumoto, and M. Hashimoto, "Characterizing SEU Cross Sections of 12- and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV Neutrons," Proceedings of International Reliability Physics Symposium (IRPS), March 2023. [pdf]

[4] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]