: W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs, April 2019.
Detail of a work
| Tweet | |
| W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. | |
| ID | 500 |
| 分類 | 国際会議 |
| タグ | 28-nm 65-nm bulk cmos cross muon-induced negative planar positive sections seu srams |
| 表題 (title) |
Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs |
| 表題 (英文) |
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| 著者名 (author) |
W. Liao,M. Hashimoto,S. Manabe,Y. Watanabe,S. Abe,M. Tampo,S. Takeshita,Y. Miyake |
| 英文著者名 (author) |
W. Liao,M. Hashimoto,S. Manabe,Y. Watanabe,S. Abe,M. Tampo,,Y. Miyake |
| キー (key) |
W. Liao,M. Hashimoto,S. Manabe,Y. Watanabe,S. Abe,M. Tampo,,Y. Miyake |
| 定期刊行物名 (journal) |
Proceedings of International Reliability Physics Symposium (IRPS) |
| 定期刊行物名 (英文) |
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| 巻数 (volume) |
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| 号数 (number) |
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| ページ範囲 (pages) |
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| 刊行月 (month) |
4 |
| 出版年 (year) |
2019 |
| Impact Factor (JCR) |
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| URL |
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| 付加情報 (note) |
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| 注釈 (annote) |
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| 内容梗概 (abstract) |
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| 論文電子ファイル | pdf (application/pdf) [一般閲覧可] |
| BiBTeXエントリ |
@article{id500,
title = {Negative and Positive Muon-induced {SEU} Cross Sections in {28-nm} and {65-nm} Planar Bulk {CMOS} {SRAMs}},
author = {W. Liao and M. Hashimoto and S. Manabe and Y. Watanabe and S. Abe and M. Tampo and S. Takeshita and Y. Miyake},
journal = {Proceedings of International Reliability Physics Symposium (IRPS)},
month = {4},
year = {2019},
}
|