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論文誌

[1] T. Kato, M. Hashimoto, and H. Matsuyama, "Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs with Comparison to 20-nm Planar SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1485 -- 1493, July 2020. [pdf]

国際会議

[1] K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. [pdf]

[2] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.

[3] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]