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14 件の該当がありました． : このページのURL : HTML

論文誌

[1] T. Tanaka, W. Liao, M. Hashimoto, and Y. Mitsuyama, "Impact of Neutron-Induced SEU in FPGA CRAM on Image-Based Lane Tracking for Autonomous Driving: from Bit Upset to SEFI and Erroneous Behavior," IEEE Transactions on Nuclear Science, volume 69, number 1, pages 35--42, January 2022. [pdf]

[2] T. Kato, M. Hashimoto, and H. Matsuyama, "Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs with Comparison to 20-nm Planar SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1485 -- 1493, July 2020. [pdf]

[3] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1374 -- 1380, July 2019. [pdf]

[4] W. Liao and M. Hashimoto, "Analyzing Impacts of SRAM, FF and Combinational Circuit on Chip-Level Neutron-Induced Soft Error Rate," IEICE Trans. on Electronics, volume E102-C, number 4, pages 296--302, April 2019. [pdf]

[5] S. Hirokawa, R. Harada, M. Hashimoto, and T. Onoye, "Characterizing Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4-V SRAMs," IEEE Transactions on Nuclear Science, volume 62, number 2, pages 420--427, April 2015. [219.pdf]

[6] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]

国際会議

[1] M. Hashimoto, Y. Zhang, and K. Ito, "Neutron-Induced Stuck Error Bits and Their Recovery in DRAMs on GPU Cards," Proceedings of International Conference on Solid State Devices and Materials (SSDM), September 2022.

[2] S. Abe, T. Sato, J. Kuroda, S. Manabe, Y. Watanabe, W. Liao, K. Ito, M. Hashimoto, M. Harada, K. Oikawa, and Y. Miyake, "Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets," Proceedings of International Symposium on Reliability Physics (IRPS), April 2020. [pdf]

[3] W. Liao, K. Ito, Y. Mitsuyama, and M. Hashimoto, "Characterizing Energetic Dependence of Low-Energy Neutron-Induced MCUs in 65 nm Bulk SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2020. [pdf]

[4] K. Ito, W. Liao, M. Hashimoto, J. Kuroda, S. Manabe, Y. Watanabe, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Characterizing Neutron-Induced SDC Rate of Matrix Multiplication in Tesla P4 GPU," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[5] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[6] W. Liao, S. Hirokawa, R. Harada, and M. Hashimoto, "Contributions of SRAM, FF and Combinational Circuit to Chip-Level Neutron-Induced Soft Error Rate -- Bulk vs. FD-SOI at 0.5 and 1.0V --," Proceedings of International NEWCAS Conference, pages 33-37, June 2017. [pdf]

[7] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.

[8] R. Harada, S. Hirokawa, and M. Hashimoto, "Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4 V SRAMs," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2014.