この検索内の頻出タグ: seu^:13 bulk^:10 srams^:10 cross^:6 muon-induced^:6 65-nm^:5 mcu^:4 neutron-induced^:4 sections^:4 28-nm^:3 characterizing^:3 impact^:3 negative^:3 planar^:3 sotb^:3 alpha-^:2 angle^:2 dependence^:2 estimation^:2 finfet^:2 rates^:2 section^:2 sram^:2 utbb-soi^:2 0.3v^:1 0.4^:1 0.4-v^:1 12-^:1 12-nm^:1 14.8^:1

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論文誌

[1] T. Tanaka, W. Liao, M. Hashimoto, and Y. Mitsuyama, "Impact of Neutron-Induced SEU in FPGA CRAM on Image-Based Lane Tracking for Autonomous Driving: from Bit Upset to SEFI and Erroneous Behavior," IEEE Transactions on Nuclear Science, volume 69, number 1, pages 35--42, January 2022. [pdf]

[2] W. Liao, K. Ito, S. Abe, Y. Mitsuyama, and M. Hashimoto, "Characterizing Energetic Dependence of Low-energy Neutron-induced SEU and MCU and Its Influence on Estimation of Terrestrial SER in 65 nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 68, number 6, pages 1228-1234, June 2021. [pdf]

[3] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1566 -- 1572, July 2020. [pdf]

[4] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1398 -- 1403, July 2019. [pdf]

[5] S. Hirokawa, R. Harada, M. Hashimoto, and T. Onoye, "Characterizing Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4-V SRAMs," IEEE Transactions on Nuclear Science, volume 62, number 2, pages 420--427, April 2015. [219.pdf]

国際会議

[1] K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. [pdf]

[2] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.

[3] K. Takami, Y. Gomi, S. Abe, W. Liao, S. Manabe, T. Matsumoto, and M. Hashimoto, "Characterizing SEU Cross Sections of 12- and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV Neutrons," Proceedings of International Reliability Physics Symposium (IRPS), March 2023. [pdf]

[4] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of Incident Angle on Negative Muon-Induced SEU Cross Section of 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[5] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]

[6] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[7] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.

[8] R. Harada, S. Hirokawa, and M. Hashimoto, "Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4 V SRAMs," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2014.