List of works
この検索内の頻出タグ: 12-nm:5 finfet:5 srams:5 analysis:3 muon-induced:3 planar:3 seu:3 28-nm:2 cell:2 different:2 simulation:2 types:2 upsets:2 20-nm:1 angular:1 comparison:1 cross:1 files:1 multi-cell:1 multiple-cell:1 neutron-induced:1 parasitic-bipolar-effect-induced:1 register:1 sections:1 sensitivity:1 single-event:1 sram:1 tcad:1
- 論文誌
- [1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs, and 28-nm Planar SRAMs and Register Files," IEEE Transactions on Nuclear Science, volume 72, number 8, 2751 - 2762, August 2025. [pdf]
- [2] T. Kato, M. Hashimoto, and H. Matsuyama, "Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs with Comparison to 20-nm Planar SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1485 -- 1493, July 2020. [pdf]
- 国際会議
- [1] Ryuichi Yasuda, Koichi Fukuda, Junichi Hattori, Kozo Takeuchi, Kozo Takeuchi, and Masanori Hashimoto, "Multi-Cell TCAD Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a 12-nm FinFET SRAM," Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV), 採録済.
- [2] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, R. Yasuda, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2024.
- [3] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023. [pdf]