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論文誌

[1] Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, "Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 71, number 4, pages 912-920, April 2024. [pdf]

[2] T. Kato, M. Tampo, S. Takeshita, H. Tanaka, H. Matsuyama, M. Hashimoto, and Y. Miyake, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha Particles," IEEE Transactions on Nuclear Science, volume 68, number 7, pages 1436-1444, July 2021. [pdf]

[3] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," IEEE Transactions on Nuclear Science, volume 67, number 7, 1599 -- 1605, July 2020. [pdf]

[4] T. Kato, M. Hashimoto, and H. Matsuyama, "Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs with Comparison to 20-nm Planar SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1485 -- 1493, July 2020. [pdf]

[5] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1374 -- 1380, July 2019. [pdf]

[6] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, S. Abe, K. Hamada, M. Tampo, and Y. Miyake, "Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1742--1749, August 2018. [pdf]

[7] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1734--1741, August 2018. [pdf]

[8] H. Fuketa, R. Harada, M. Hashimoto, and T. Onoye, "Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 10T Subthreshold SRAM," IEEE Transactions on Device and Materials Reliability, volume 14, number 1, 463 -- 470, March 2014. [185.pdf]

[9] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]

[10] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]

国際会議

[1] M. Kamibayashi, K. Kobayashi, and M. Hashimoto, "Single Bit Upsets Versus Burst Errors of Stacked-Capacitor DRAMs Induced by High-Energy Neutron -SECDED Is No Longer Effective-," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2022.

[2] T. Kato, M. Tampo, S. Takeshita, Y. Miyake, H Tanaka, and M. Hashimoto, "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization with Neutrons and Alpha-Particles," IEEE Nuclear and Space Radiation Effects Conference (NSREC), November 2020.

[3] S. Abe, T. Sato, J. Kuroda, S. Manabe, Y. Watanabe, W. Liao, K. Ito, M. Hashimoto, M. Harada, K. Oikawa, and Y. Miyake, "Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets," Proceedings of International Symposium on Reliability Physics (IRPS), April 2020. [pdf]

[4] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm Bulk SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[5] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[6] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon Induced Upsets in 65nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.

[7] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.

[8] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," Proceedings of International Reliability Physics Symposium (IRPS), pages 213--217, May 2010. [140.PDF]