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論文誌

[1] J. Chen and M. Hashimoto, "A Frequency-Dependent Target Impedance Method Fulfilling Voltage Drop Constraints in Multiple Frequency Ranges," IEEE Transactions on Components, Packaging and Manufacturing Technology, volume 10, number 11, 1769 -- 1781, November 2020. [pdf]

[2] H. Fuketa, R. Harada, M. Hashimoto, and T. Onoye, "Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 10T Subthreshold SRAM," IEEE Transactions on Device and Materials Reliability, volume 14, number 1, 463 -- 470, March 2014. [185.pdf]

[3] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]

[4] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]

国際会議

[1] S. Hirokawa, R. Harada, K. Sakuta, Y. Watanabe, and M. Hashimoto, "Multiple Sensitive Volume Based Soft Error Rate Estimation with Machine Learning," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2016. [pdf]

[2] N. Banno, M.Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, and T. Sugibayashi, "A Novel Two-Varistors (a-Si/SiN/a-Si) Selected Complementary Atom Switch (2V-1CAS) for Nonvolatile Crossbar Switch with Multiple Fan-Outs," Technical Digest of IEEE International Electron Devices Meeting (IEDM), pages 32--35, December 2015. [225.PDF]

[3] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.

[4] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," Proceedings of International Reliability Physics Symposium (IRPS), pages 213--217, May 2010. [140.PDF]