List of works
この検索内の頻出タグ: subthreshold:7 sram:6 10t:5 cell:5 multiple:5 upsets:5 65-nm:4 soft:4 errors:3 alpha-particle-induced:2 angular:2 dependency:2 induced:2 neutron:2 0.8-v:1 110-na:1 analysis:1 circuit:1 cmos:1 current:1 error:1 immunity:1 invited:1 measurement:1 neutron-induced:1 operation:1 reference:1
- 論文誌
- [1] H. Fuketa, R. Harada, M. Hashimoto, and T. Onoye, "Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 10T Subthreshold SRAM," IEEE Transactions on Device and Materials Reliability, volume 14, number 1, 463 -- 470, March 2014. [185.pdf]
- [2] I. Homjakovs, T. Hirose, Y. Osaki, M. Hashimoto, and T. Onoye, "A 0.8-V 110-nA CMOS Current Reference Circuit Using Subthreshold Operation," IEICE Electronics Express (ELEX), volume 10, number 4, March 2013. [182.pdf]
- [3] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]
- [4] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]
- 国際会議
- [1] M. Hashimoto, "Soft Error Immunity of Subthreshold SRAM (Invited)," Proceedings of IEEE International Conference on ASIC, pages 91--94, October 2013. [192.pdf]
- [2] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.
- [3] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," Proceedings of International Reliability Physics Symposium (IRPS), pages 213--217, May 2010. [140.PDF]