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論文誌

[1] W. Liao, K. Ito, S. Abe, Y. Mitsuyama, and M. Hashimoto, "Characterizing Energetic Dependence of Low-energy Neutron-induced SEU and MCU and Its Influence on Estimation of Terrestrial SER in 65 nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 68, number 6, pages 1228-1234, June 2021. [pdf]

[2] M. Hashimoto, K. Kobayashi, J. Furuta, S. Abe, and Y. Watanabe, "Characterizing SRAM and FF Soft Error Rates with Measurement and Simulation (Invited)," Integration, the VLSI Journal, volume 69, pages 161--179, November 2019. [pdf]

[3] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 66, number 7, 1390 -- 1397, July 2019. [pdf]

[4] W. Liao and M. Hashimoto, "Analyzing Impacts of SRAM, FF and Combinational Circuit on Chip-Level Neutron-Induced Soft Error Rate," IEICE Trans. on Electronics, volume E102-C, number 4, pages 296--302, April 2019. [pdf]

[5] H. Fuketa, R. Harada, M. Hashimoto, and T. Onoye, "Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 10T Subthreshold SRAM," IEEE Transactions on Device and Materials Reliability, volume 14, number 1, 463 -- 470, March 2014. [185.pdf]

[6] T. Uemura, T. Kato, H. Matsuyama, and M. Hashimoto, "Soft-Error in SRAM at Ultra-Low Voltage and Impact of Secondary Proton in Terrestrial Environment," IEEE Transactions on Nuclear Science, volume 60, number 6, pages 4232--4237, December 2013. [198.pdf]

[7] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]

[8] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]

国際会議

[1] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of Incident Angle on Negative Muon-Induced SEU Cross Section of 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[2] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[3] W. Liao, S. Hirokawa, R. Harada, and M. Hashimoto, "Contributions of SRAM, FF and Combinational Circuit to Chip-Level Neutron-Induced Soft Error Rate -- Bulk vs. FD-SOI at 0.5 and 1.0V --," Proceedings of International NEWCAS Conference, pages 33-37, June 2017. [pdf]

[4] T. Uemura, T. Kato, S. Okano, H. Matsuyama, and M. Hashimoto, "Impact of Package on Neutron Induced Single Event Upset in 20 nm SRAM," Proceedings of International Symposium on Reliability Physics (IRPS), April 2015. [215.pdf]

[5] M. Hashimoto, "Soft Error Immunity of Subthreshold SRAM (Invited)," Proceedings of IEEE International Conference on ASIC, pages 91--94, October 2013. [192.pdf]

[6] T. Uemura, T. Kato, H. Matsuyama, and M. Hashimoto, "Scaling Trend of SRAM and FF of Soft-Error Rate and Their Contribution to Processor Reliability on Bulk CMOS Technology," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2013.

[7] T. Uemura, T. Kato, H. Matsuyama, and M. Hashimoto, "Soft-Error in SRAM at Ultra Low Voltage and Impact of Secondary Proton in Terrestrial Environment," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2013.

[8] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.

[9] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," Proceedings of International Reliability Physics Symposium (IRPS), pages 213--217, May 2010. [140.PDF]