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W. Liao, S. Hirokawa, R. Harada, and M. Hashimoto, "Contributions of SRAM, FF and Combinational Circuit to Chip-Level Neutron-Induced Soft Error Rate -- Bulk vs. FD-SOI at 0.5 and 1.0V --," Proceedings of International NEWCAS Conference, pp. 33-37, June 2017.
ID 452
分類 国際会議
タグ 0.5 1.0v bulk chip-level circuit combinational contributions error fd-soi ff neutron-induced rate soft sram vs.
表題 (title) Contributions of SRAM, FF and Combinational Circuit to Chip-Level Neutron-Induced Soft Error Rate -- Bulk vs. FD-SOI at 0.5 and 1.0V --
表題 (英文)
著者名 (author) W. Liao,S. Hirokawa,R. Harada,M. Hashimoto
英文著者名 (author) W. Liao,S. Hirokawa,R. Harada,M. Hashimoto
キー (key) W. Liao,S. Hirokawa,R. Harada,M. Hashimoto
定期刊行物名 (journal) Proceedings of International NEWCAS Conference
定期刊行物名 (英文)
巻数 (volume)
号数 (number)
ページ範囲 (pages) 33-37
刊行月 (month) 6
出版年 (year) 2017
Impact Factor (JCR)
URL
付加情報 (note)
注釈 (annote)
内容梗概 (abstract)
論文電子ファイル pdf (application/pdf) [一般閲覧可]
BiBTeXエントリ
@article{id452,
         title = {Contributions of {SRAM}, {FF} and Combinational Circuit to Chip-Level Neutron-Induced Soft Error Rate  -- Bulk {vs.} {FD-SOI} at 0.5 and {1.0V} --},
        author = {W. Liao and S. Hirokawa and R. Harada and M. Hashimoto},
       journal = {Proceedings of International NEWCAS Conference},
         pages = {33-37},
         month = {6},
          year = {2017},
}