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論文誌

[1] H. Fuketa, R. Harada, M. Hashimoto, and T. Onoye, "Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 10T Subthreshold SRAM," IEEE Transactions on Device and Materials Reliability, volume 14, number 1, 463 -- 470, March 2014. [185.pdf]

[2] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]

[3] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]

国際会議

[1] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.

[2] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," Proceedings of International Reliability Physics Symposium (IRPS), pages 213--217, May 2010. [140.PDF]

[3] M. Hashimoto, K. Fujimori, and H. Onodera, "Automatic Generation of Standard Cell Library in VDSM Technologies," In Proceedings of International Symposium on Quality Electronic Design (ISQED), pages 36-41, March 2004. [53.PDF]