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論文誌

[1] Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, "Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, 採録済. [pdf]

[2] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1566 -- 1572, July 2020. [pdf]

[3] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," IEEE Transactions on Nuclear Science, volume 67, number 7, 1599 -- 1605, July 2020. [pdf]

[4] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1374 -- 1380, July 2019. [pdf]

[5] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 66, number 7, 1390 -- 1397, July 2019. [pdf]

[6] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1398 -- 1403, July 2019. [pdf]

[7] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, S. Abe, K. Hamada, M. Tampo, and Y. Miyake, "Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1742--1749, August 2018. [pdf]

[8] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]

[9] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 58, number 4, pages 2097--2102, August 2011. [159.pdf]

国際会議

[1] M. Hashimoto, X. Bai, N. Banno, M. Tada, T. Sakamoto, J. Yu, R. Doi, Y. Araki, H. Onodera, T. Imagawa, H. Ochi, K. Wakabayashi, Y. Mitsuyama, and T. Sugibayashi, "Via-Switch FPGA: 65nm CMOS Implementation and Architecture Extension for AI Applications," Technical Digest of International Solid-State Circuits Conference (ISSCC), pages 502--503, February 2020. [pdf]

[2] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65-nm Bulk SRAMs with DC Muon Beam at RCNP-MuSIC Facility," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[3] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of Incident Angle on Negative Muon-Induced SEU Cross Section of 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[4] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm Bulk SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[5] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]

[6] M. Hashimoto, W. Liao, S. Manabe, and Y. Watanabe, "Characterizing Soft Error Rates of 65-nm SOTB and Bulk SRAMs with Muon and Neutron Beams (Invited)," Proceedings of SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), October 2018. [pdf]

[7] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[8] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[9] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[10] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Momentum and Supply Voltage Dependencies of SEUs Induced by Low-Energy Negative and Positive Muons in 65-nm UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.

[11] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.

[12] H. Fuketa, M. Hashimoto, Y. Mitsuyama, and T. Onoye, "Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," Proceedings of International Reliability Physics Symposium (IRPS), pages 213--217, May 2010. [140.PDF]