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論文誌
[1] Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, "Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, 採録済. [pdf]
[2] S. Abe, M. Hashimoto, W. Liao, T. Kato, H. Asai, K. Shimbo, H. Matsuyama, T. Sato, K. Kobayashi, and Y. Watanabe, "A Terrestrial SER Estimation Methodology Based on Simulation Coupled with One-Time Neutron Irradiation Testing," IEEE Transactions on Nuclear Science, volume 70, number 8, 1652 -- 1657, August 2023. [pdf]
[3] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65 nm Bulk SRAMs with DC Muon Beam at RCNP MuSIC Facility," IEEE Transactions on Nuclear Science, volume 67, number 7, 1555 -- 1559, July 2020. [pdf]
[4] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1566 -- 1572, July 2020. [pdf]
[5] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," IEEE Transactions on Nuclear Science, volume 67, number 7, 1599 -- 1605, July 2020. [pdf]
[6] M. Hashimoto, K. Kobayashi, J. Furuta, S. Abe, and Y. Watanabe, "Characterizing SRAM and FF Soft Error Rates with Measurement and Simulation (Invited)," Integration, the VLSI Journal, volume 69, pages 161--179, November 2019. [pdf]
[7] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1374 -- 1380, July 2019. [pdf]
[8] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 66, number 7, 1390 -- 1397, July 2019. [pdf]
[9] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1398 -- 1403, July 2019. [pdf]
[10] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, S. Abe, K. Hamada, M. Tampo, and Y. Miyake, "Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1742--1749, August 2018. [pdf]
[11] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1734--1741, August 2018. [pdf]
[12] D. Fukuda, K. Watanabe, Y. Kanazawa, and M. Hashimoto, "Modeling the Effect of Global Layout Pattern on Wire Width Variation for On-The-Fly Etching Process Modification," IEICE Trans. on Fundamentals of Electronics, Communications and Computer Sciences, volume E98-A, number 7, pages 1467--1474, July 2015. [221.pdf]
[13] D. Fukuda, K. Watanabe, N. Idani, Y. Kanazawa, and M. Hashimoto, "Edge-Over-Erosion Error Prediction Method Based on Multi-Level Machine Learning Algorithm," IEICE Trans. on Fundamentals of Electronics, Communications and Computer Sciences, volume E97-A, number 12, pages 2373--2382, December 2014. [209.pdf]
[14] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]
[15] T. Kanamoto, Y. Ogasahara, K. Natsume, K. Yamaguchi, H. Amishiro, T. Watanabe, and M. Hashimoto, "Impact of Well Edge Proximity Effect on Timing," IEICE Trans. on Fundamentals of Electronics, Communications and Computer Sciences, volume E91-A, number 12, pages 3461-3464, December 2008. [111.pdf]
国際会議
[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.
[2] M. Niikura, R. Mizuno, S. Manabe, T. Y. Saito, T. Matsuzaki, S. Abe, H. Fukuda, M. Hashimoto, K. Ishida, A. Hillier, N. Kawamura, Y. Kawashima, S. Kawase, T. Kawata, K. Kitafuji, F. Minato, M. Oishi, P. Strasser, A. Sato, K. Shimomura, S. Takeshita, M. Tampo, D. Tomono, I. Umegaki, Y. Yamaguchi, and Y. Watanabe, "Nuclear Physics for Muon-Induced Soft Error," Workshop for Computational Technique for Negative Muon Spectroscopy and Elemental Analysis, August 2023.
[3] S. Abe, M. Hashimoto, W. Liao, T. Kato, H. Asai, K. Shimbo, H. Matsuyama, T. Sato, K. Kobayashi, and Y. Watanabe, "A Terrestrial SER Estimation Methodology with Simulation and Single-Source Irradiation Applicable to Diverse Neutron Sources," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2022.
[4] S. Abe, T. Sato, J. Kuroda, S. Manabe, Y. Watanabe, W. Liao, K. Ito, M. Hashimoto, M. Harada, K. Oikawa, and Y. Miyake, "Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets," Proceedings of International Symposium on Reliability Physics (IRPS), April 2020. [pdf]
[5] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65-nm Bulk SRAMs with DC Muon Beam at RCNP-MuSIC Facility," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.
[6] K. Ito, W. Liao, M. Hashimoto, J. Kuroda, S. Manabe, Y. Watanabe, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Characterizing Neutron-Induced SDC Rate of Matrix Multiplication in Tesla P4 GPU," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.
[7] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of Incident Angle on Negative Muon-Induced SEU Cross Section of 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.
[8] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm Bulk SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.
[9] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]
[10] M. Hashimoto, W. Liao, S. Manabe, and Y. Watanabe, "Characterizing Soft Error Rates of 65-nm SOTB and Bulk SRAMs with Muon and Neutron Beams (Invited)," Proceedings of SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), October 2018. [pdf]
[11] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.
[12] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.
[13] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.
[14] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon Induced Upsets in 65nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.
[15] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Momentum and Supply Voltage Dependencies of SEUs Induced by Low-Energy Negative and Positive Muons in 65-nm UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.
[16] S. Hirokawa, R. Harada, K. Sakuta, Y. Watanabe, and M. Hashimoto, "Multiple Sensitive Volume Based Soft Error Rate Estimation with Machine Learning," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2016. [pdf]
[17] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.
[18] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.
[19] T. Kanamoto, Y. Ogasahara, K. Natsume, K. Yamaguchi, H. Amishiro, T. Watanabe, and M. Hashimoto, "Impact of Well Edge Proximity Effect on Timing," Proceedings of 37th European Solid-State Device Research Conference (ESSDERC), pages 115--118, September 2007. [92.pdf]