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25 件の該当がありました． : このページのURL : HTML

論文誌

[1] Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, "Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 71, number 4, pages 912-920, April 2024. [pdf]

[2] W. Liao, K. Ito, S. Abe, Y. Mitsuyama, and M. Hashimoto, "Characterizing Energetic Dependence of Low-energy Neutron-induced SEU and MCU and Its Influence on Estimation of Terrestrial SER in 65 nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 68, number 6, pages 1228-1234, June 2021. [pdf]

[3] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65 nm Bulk SRAMs with DC Muon Beam at RCNP MuSIC Facility," IEEE Transactions on Nuclear Science, volume 67, number 7, 1555 -- 1559, July 2020. [pdf]

[4] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs," IEEE Transactions on Nuclear Science, volume 67, number 7, 1566 -- 1572, July 2020. [pdf]

[5] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1374 -- 1380, July 2019. [pdf]

[6] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," IEEE Transactions on Nuclear Science, volume 66, number 7, 1390 -- 1397, July 2019. [pdf]

[7] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," IEEE Transactions on Nuclear Science, volume 66, number 7, 1398 -- 1403, July 2019. [pdf]

[8] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs," IEEE Transactions on Nuclear Science, volume 65, number 8, pages 1734--1741, August 2018. [pdf]

[9] S. Hirokawa, R. Harada, M. Hashimoto, and T. Onoye, "Characterizing Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4-V SRAMs," IEEE Transactions on Nuclear Science, volume 62, number 2, pages 420--427, April 2015. [219.pdf]

国際会議

[1] K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. [pdf]

[2] W. Liao, K. Ito, Y. Mitsuyama, and M. Hashimoto, "Characterizing Energetic Dependence of Low-Energy Neutron-Induced MCUs in 65 nm Bulk SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2020. [pdf]

[3] T. Mahara, S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, T. Y. Saito, M. Niikura, K. Ninomiya, D. Tomono, and A. Sato, "Irradiation Test of 65-nm Bulk SRAMs with DC Muon Beam at RCNP-MuSIC Facility," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[4] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Impact of Incident Angle on Negative Muon-Induced SEU Cross Section of 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[5] J. Kuroda, S. Manabe, Y. Watanabe, K. Ito, W. Liao, M. Hashimoto, S. Abe, M. Harada, K. Oikawa, and Y. Miyake, "Measurement of Single-Event Upsets in 65-nm Bulk SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2019.

[6] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, S. Abe, M. Tampo, S. Takeshita, and Y. Miyake, "Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs," Proceedings of International Reliability Physics Symposium (IRPS), April 2019. [pdf]

[7] M. Hashimoto, W. Liao, S. Manabe, and Y. Watanabe, "Characterizing Soft Error Rates of 65-nm SOTB and Bulk SRAMs with Muon and Neutron Beams (Invited)," Proceedings of SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), October 2018. [pdf]

[8] S. Manabe, Y. Watanabe, W. Liao, M. Hashimoto, and S. Abe, "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[9] W. Liao, M. Hashimoto, S. Manabe, S. Abe, and Y. Watanabe, "Similarity Analysis on Neutron- and Negative Moun-Induced MCUs in 65-nm Bulk SRAM," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[10] S. Abe, W. Liao, S. Manabe, T. Sato, M. Hashimoto, and Y. Watanabe, "Impact of Irradiation Side on Neutron-Induced Single Event Upsets in 65-nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2018.

[11] W. Liao, M. Hashimoto, S. Manabe, Y. Watanabe, K. Nakano, H. Sato, T. Kin, K. Hamada, M. Tampo, and Y. Miyake, "Measurement and Mechanism Investigation of Negative and Positive Muon Induced Upsets in 65nm Bulk SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2017.

[12] W. Liao, S. Hirokawa, R. Harada, and M. Hashimoto, "Contributions of SRAM, FF and Combinational Circuit to Chip-Level Neutron-Induced Soft Error Rate -- Bulk vs. FD-SOI at 0.5 and 1.0V --," Proceedings of International NEWCAS Conference, pages 33-37, June 2017. [pdf]

[13] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.

[14] T. Uemura, S. Okano, T. Kato, H. Matsuyama, and M. Hashimoto, "Soft Error Immune Latch Design for 20 nm Bulk CMOS," Proceedings of International Reliability Physics Symposium (IRPS), April 2015. [217.pdf]

[15] R. Harada, S. Hirokawa, and M. Hashimoto, "Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4 V SRAMs," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2014.

[16] T. Uemura, T. Kato, H. Matsuyama, and M. Hashimoto, "Scaling Trend of SRAM and FF of Soft-Error Rate and Their Contribution to Processor Reliability on Bulk CMOS Technology," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2013.