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論文誌
[1] S. Hirokawa, R. Harada, M. Hashimoto, and T. Onoye, "Characterizing Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4-V SRAMs," IEEE Transactions on Nuclear Science, volume 62, number 2, pages 420--427, April 2015. [219.pdf]
国際会議
[1] M. Hashimoto, W. Liao, S. Manabe, and Y. Watanabe, "Characterizing Soft Error Rates of 65-nm SOTB and Bulk SRAMs with Muon and Neutron Beams (Invited)," Proceedings of SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), October 2018. [pdf]
[2] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.
[3] R. Harada, S. Hirokawa, and M. Hashimoto, "Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0.4 V SRAMs," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2014.