List of works
この検索内の頻出タグ: fault:5 irradiation:3 neutron:3 test:3 analyzing:2 control:2 dnn:2 due:2 errors:2 flow:2 gpus:2 injection:2 injections:2 model:2 parameters:2 vulnerability:2 2v-1cas:1 a-si/sin/a-si:1 all:1 analysis:1 atom:1 complementary:1 crossbar:1 detection:1 estimating:1 estimation:1 fan-outs:1 few:1 mode:1 multiple:1
- 論文誌
- [1] Y. Zhang, H. Itsuji, T. Uezono, T. Toba, and M. Hashimoto, "Vulnerability Estimation of DNN Model Parameters with Few Fault Injections," IEICE Trans. on Fundamentals of Electronics, Communications and Computer Sciences, volume E106-A, number 3, pages 523-531, March 2023. [pdf]
- [2] K. Ito, Y. Zhang, H. Itsuji, T. Uezono, T. Toba, and M. Hashimoto, "Analyzing DUE Errors on GPUs with Neutron Irradiation Test and Fault Injection to Control Flow," IEEE Transactions on Nuclear Science, volume 68, number 8, pages 1668--1674, August 2021. [pdf]
- 国際会議
- [1] Y. Zhang, H. Itsuji, T. Uezono, T. Toba, and M. Hashimoto, "Estimating Vulnerability of All Model Parameters in DNN with a Small Number of Fault Injections," Proceedings of Design, Automation and Test in Europe Conference (DATE), pages 60-63, March 2022. [pdf]
- [2] Y. Zhang, K. Ito, H. Itsuji, T. Uezono, T. Toba, and M. Hashimoto, "Fault Mode Analysis of Neural Network-Based Object Detection on GPUs with Neutron Irradiation Test," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2020.
- [3] K. Ito, Y. Zhang, H. Itsuji, T. Uezono, T. Toba, and M. Hashimoto, "Analyzing DUE Errors with Neutron Irradiation Test and Fault Injection to Control Flow," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), October 2020.
- [4] N. Banno, M.Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, and T. Sugibayashi, "A Novel Two-Varistors (a-Si/SiN/a-Si) Selected Complementary Atom Switch (2V-1CAS) for Nonvolatile Crossbar Switch with Multiple Fan-Outs," Technical Digest of IEEE International Electron Devices Meeting (IEDM), pages 32--35, December 2015. [225.PDF]