: N. Banno, M.Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, and T. Sugibayashi, A Novel Two-Varistors (a-Si/SiN/a-Si) Selected Complementary Atom Switch (2V-1CAS) for Nonvolatile Crossbar Switch with Multiple Fan-Outs, December 2015.
Detail of a work
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| N. Banno, M.Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, and T. Sugibayashi, "A Novel Two-Varistors (a-Si/SiN/a-Si) Selected Complementary Atom Switch (2V-1CAS) for Nonvolatile Crossbar Switch with Multiple Fan-Outs," Technical Digest of IEEE International Electron Devices Meeting (IEDM), pp. 32--35, December 2015. | |
| ID | 422 |
| 分類 | 国際会議 |
| タグ | 2v-1cas a-si/sin/a-si atom complementary crossbar fan-outs multiple nonvolatile novel selected switch two-varistors |
| 表題 (title) |
A Novel Two-Varistors (a-Si/SiN/a-Si) Selected Complementary Atom Switch (2V-1CAS) for Nonvolatile Crossbar Switch with Multiple Fan-Outs |
| 表題 (英文) |
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| 著者名 (author) |
N. Banno,M.Tada,K. Okamoto,N. Iguchi,T. Sakamoto,M. Miyamura,Y. Tsuji,H. Hada,H. Ochi,H. Onodera,M. Hashimoto,T. Sugibayashi |
| 英文著者名 (author) |
N. Banno,M.Tada,K. Okamoto,N. Iguchi,T. Sakamoto,M. Miyamura,Y. Tsuji,H. Hada,H. Ochi,H. Onodera,M. Hashimoto,T. Sugibayashi |
| キー (key) |
N. Banno,M.Tada,K. Okamoto,N. Iguchi,T. Sakamoto,M. Miyamura,Y. Tsuji,H. Hada,H. Ochi,H. Onodera,M. Hashimoto,T. Sugibayashi |
| 定期刊行物名 (journal) |
Technical Digest of IEEE International Electron Devices Meeting (IEDM) |
| 定期刊行物名 (英文) |
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| 巻数 (volume) |
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| 号数 (number) |
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| ページ範囲 (pages) |
32--35 |
| 刊行月 (month) |
12 |
| 出版年 (year) |
2015 |
| Impact Factor (JCR) |
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| URL |
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| 付加情報 (note) |
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| 注釈 (annote) |
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| 内容梗概 (abstract) |
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| 論文電子ファイル | 225.PDF (application/pdf) [一般閲覧可] |
| BiBTeXエントリ |
@article{id422,
title = {A Novel Two-Varistors {(a-Si/SiN/a-Si)} selected Complementary Atom Switch {(2V-1CAS)} for Nonvolatile Crossbar Switch with Multiple Fan-outs},
author = {N. Banno and M.Tada and K. Okamoto and N. Iguchi and T. Sakamoto and M. Miyamura and Y. Tsuji and H. Hada and H. Ochi and H. Onodera and M. Hashimoto and T. Sugibayashi},
journal = {Technical Digest of IEEE International Electron Devices Meeting (IEDM)},
pages = {32--35},
month = {12},
year = {2015},
}
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