この検索内の頻出タグ: multiple^:3 10t^:2 65-nm^:2 angular^:2 cell^:2 dependency^:2 error^:2 induced^:2 muon-induced^:2 neutron^:2 rate^:2 seu^:2 soft^:2 sram^:2 srams^:2 subthreshold^:2 upsets^:2 0.3v^:1 12-nm^:1 28-nm^:1 analysis^:1 bulk^:1 characterization^:1 cross^:1 estimation^:1 finfet^:1 learning^:1 machine^:1 mcu^:1 neutron-induced^:1

9 件の該当がありました． : このページのURL : HTML

論文誌

[1] T. Uemura, T. Kato, R. Tanabe, H. Iwata, J. Ariyoshi, H. Matsuyama, and M. Hashimoto, "Exploring Well-Configurations for Minimizing Single Event Latchup," IEEE Transactions on Nuclear Science, volume 61, number 6, pages 3282--3289, December 2014. [211.pdf]

[2] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Transactions on Nuclear Science, volume 59, number 6, pages 2791--2795, December 2012. [175.pdf]

国際会議

[1] Y. Gomi, K. Takami, R. Mizuno, M. Niikura, Y. Deng, S. Kawase, Y. Watanabe, S. Abe, W. Liao, M. Tampo, I. Umegaki, S. Takeshita, K. Shimomura, Y. Miyake, and M. Hashimoto, "Muon-Induced SEU Cross Sections of 12-nm FinFET and 28-nm Planar SRAMs," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2023.

[2] M. Niikura, R. Mizuno, S. Manabe, T. Y. Saito, T. Matsuzaki, S. Abe, H. Fukuda, M. Hashimoto, K. Ishida, A. Hillier, N. Kawamura, Y. Kawashima, S. Kawase, T. Kawata, K. Kitafuji, F. Minato, M. Oishi, P. Strasser, A. Sato, K. Shimomura, S. Takeshita, M. Tampo, D. Tomono, I. Umegaki, Y. Yamaguchi, and Y. Watanabe, "Nuclear Physics for Muon-Induced Soft Error," Workshop for Computational Technique for Negative Muon Spectroscopy and Elemental Analysis, August 2023.

[3] S. Hirokawa, R. Harada, K. Sakuta, Y. Watanabe, and M. Hashimoto, "Multiple Sensitive Volume Based Soft Error Rate Estimation with Machine Learning," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2016. [pdf]

[4] S. Hirokawa, R. Harada, M. Hashimoto, K. Sakuta, and Y. Watanabe, "Neutron-Induced SEU and MCU Rate Characterization and Analysis of SOTB and Bulk SRAMs at 0.3V Operation," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2015.

[5] T. Uemura, T. Kato, R. Tanabe, H. Iwata, J. Ariyoshi, H. Matsuyama, and M. Hashimoto, "Optimizing Well-Configuration for Minimizing Single Event Latchup," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2014.

[6] T. Uemura, T. Kato, R. Tanabe, H. Iwata, H. Matsuyama, M. Hashimoto, K. Takahisa, M. Fukuda, and K. Hatanaka, "Preventing Single Event Latchup with Deep P-Well on P-Substrate," Proceedings of International Reliability Physics Symposium (IRPS), June 2014. [203.pdf]

[7] R. Harada, S. Abe, H. Fuketa, T. Uemura, M. Hashimoto, and Y. Watanabe, "Angular Dependency of Neutron Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM," IEEE Nuclear and Space Radiation Effects Conference (NSREC), July 2012.