この検索内の頻出タグ: sram^:4 terrestrial^:4 impact^:3 neutron^:3 nm^:3 soft-error^:3 20^:2 20-nm^:2 bulk^:2 cmos^:2 environment^:2 estimation^:2 irradiation^:2 methodology^:2 proton^:2 secondary^:2 ser^:2 simulation^:2 single-event^:2 srams^:2 upsets^:2 voltage^:2 12-nm^:1 28^:1 alpha^:1 angular^:1 applicable^:1 characterization^:1 comparative^:1 comparison^:1

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@article{id613,
         title = {A Terrestrial {SER} Estimation Methodology based on Simulation coupled with One-Time Neutron Irradiation Testing},
        author = {S. Abe and M. Hashimoto and W. Liao and T. Kato and H. Asai and K. Shimbo and H. Matsuyama and T. Sato and K. Kobayashi and Y. Watanabe},
       journal = {IEEE Transactions on Nuclear Science},
        volume = {70},
        number = {8},
         pages = {1652 -- 1657},
         month = {8},
          year = {2023},
}

@article{id572,
         title = {Muon-Induced Single-Event Upsets in {20-nm} {SRAMs:} Comparative Characterization with Neutrons and Alpha Particles},
        author = {T. Kato and M. Tampo and S. Takeshita and H. Tanaka and H. Matsuyama and M. Hashimoto and Y. Miyake},
       journal = {IEEE Transactions on Nuclear Science},
        volume = {68},
        number = {7},
         pages = {1436-1444},
         month = {7},
          year = {2021},
}

@article{id547,
         title = {Angular Sensitivity of Neutron-Induced Single-Event Upsets in {12-nm} {FinFET} {SRAMs} with Comparison to {20-nm} Planar {SRAMs}},
        author = {T. Kato and M. Hashimoto and H. Matsuyama},
       journal = {IEEE Transactions on Nuclear Science},
        volume = {67},
        number = {7},
         pages = {1485 -- 1493},
         month = {7},
          year = {2020},
}

@article{id398,
         title = {Exploring Well-Configurations for Minimizing Single Event Latchup},
        author = {T. Uemura and T. Kato and R. Tanabe and H. Iwata and J. Ariyoshi and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Transactions on Nuclear Science},
        volume = {61},
        number = {6},
         pages = {3282--3289},
         month = {12},
          year = {2014},
}

@article{id368,
         title = {Mitigating Multi-Bit-Upset with Well-Slits in 28 {nm} Multi-Bit-Latch},
        author = {T. Uemura and T. Kato and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Transactions on Nuclear Science},
        volume = {60},
        number = {6},
         pages = {4362--4367},
         month = {12},
          year = {2013},
}

@article{id369,
         title = {Soft-Error in {SRAM} at Ultra-Low Voltage  and Impact of Secondary Proton  in Terrestrial Environment},
        author = {T. Uemura and T. Kato and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Transactions on Nuclear Science},
        volume = {60},
        number = {6},
         pages = {4232--4237},
         month = {12},
          year = {2013},
}

@article{id597,
         title = {A Terrestrial {SER} Estimation Methodology with Simulation and Single-Source Irradiation Applicable to Diverse Neutron Sources},
        author = {S. Abe and M. Hashimoto and W. Liao and T. Kato and H. Asai and K. Shimbo and H. Matsuyama and T. Sato and K. Kobayashi and Y. Watanabe},
       journal = {Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS)},
         month = {10},
          year = {2022},
}

@article{id400,
         title = {Impact of Package on Neutron Induced Single Event Upset in 20 {nm} {SRAM}},
        author = {T. Uemura and T. Kato and S. Okano and H. Matsuyama and M. Hashimoto},
       journal = {Proceedings of International Symposium on Reliability Physics (IRPS)},
         month = {4},
          year = {2015},
}

@article{id402,
         title = {Soft Error Immune Latch Design for 20 {nm} bulk {CMOS}},
        author = {T. Uemura and S. Okano and T. Kato and H. Matsuyama and M. Hashimoto},
       journal = {Proceedings of International Reliability Physics Symposium (IRPS)},
         month = {4},
          year = {2015},
}

@article{id378,
         title = {Optimizing Well-Configuration for Minimizing Single Event Latchup},
        author = {T. Uemura and T. Kato and R. Tanabe and H. Iwata and J. Ariyoshi and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Nuclear and Space Radiation Effects Conference (NSREC)},
         month = {7},
          year = {2014},
}

@article{id377,
         title = {Preventing Single Event Latchup with Deep P-well on P-substrate},
        author = {T. Uemura and T. Kato and R. Tanabe and H. Iwata and H. Matsuyama and M. Hashimoto and K. Takahisa and M. Fukuda and K. Hatanaka},
       journal = {Proceedings of International Reliability Physics Symposium (IRPS)},
         month = {6},
          year = {2014},
}

@article{id346,
         title = {Scaling Trend of {SRAM} and {FF} of Soft-Error Rate and Their Contribution to Processor reliability on Bulk {CMOS} Technology},
        author = {T. Uemura and T. Kato and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Nuclear and Space Radiation Effects Conference (NSREC)},
         month = {7},
          year = {2013},
}

@article{id347,
         title = {Soft-Error in {SRAM} at Ultra Low Voltage and Impact of Secondary Proton in Terrestrial Environment},
        author = {T. Uemura and T. Kato and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Nuclear and Space Radiation Effects Conference (NSREC)},
         month = {7},
          year = {2013},
}

@article{id348,
         title = {Mitigating Multi-Cell-Upset with Well-Slits in 28nm Multi-Bit-Latch},
        author = {T. Uemura and T. Kato and H. Matsuyama and M. Hashimoto},
       journal = {IEEE Nuclear and Space Radiation Effects Conference (NSREC)},
         month = {7},
          year = {2013},
}