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論文誌

[1] K. Takeuchi, K. Sakamoto, Y. Tsuchiya, T. Kato, R. Nakamura, A. Takeyama, T. Makino, T. Ohshima, M. Hashimoto, and H. Shindo, "Cross-Section Prediction Method for Proton Direct Ionization Induced Single Event Upset," IEEE Transactions on Nuclear Science, 採録済.

国際会議

[1] K. Takeuchi and M. Hashimoto, "Sensitive Volume Allocation Aligned with a Physics-Based Analytical Cross Section Model for Monte Carlo-Based Proton-Induced SEU Simulation," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), 採録済.

[2] M. Hashimoto, R. Yasuda, K. Takami, Y. Gomi, and K. Takeuchi, "ML-assisted SRAM Soft Error Rate Characterization: Opportunities and Challenges," Proceedings of Asia and South Pacific Design Automation Conference (ASP-DAC), 379 - 384, January 2025. [pdf]

[3] K. Takeuchi, K. Sakamoto, Y. Tsuchiya, T. Kato, R. Nakamura, A. Takeyama, T. Makino, T. Ohshima, M. Hashimoto, and H. Shindo, "Cross-Section Prediction Method for Proton Direct Ionization Induced Single Event Upset," Proceedings of European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 2024.

[4] K. Takeuchi, T. Kato, and M. Hashimoto, "An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs," Proceedings of International Symposium on Reliability Physics (IRPS), April 2024. [pdf]

著書

[1] T. Sato, M. Hashimoto, S. Tanakamaru, K. Takeuchi, Y. Sato, S. Kajihara, M. Yoshimoto, J. Jung, Y. Kimi, H. Kawaguchi, H. Shimada, and J. Yao, "Time-Dependent Degradation in Device Characteristics and Countermeasures by Design," Book chapter, VLSI Design and Test for Systems Dependability, Springer, August 2018.