: R. Yasuda, K. Fukuda, J. Hattori, K. Takeuchi, Y. Gomi, and M. Hashimoto, Multi-Cell TCAD Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a 12-nm FinFET SRAM, 採録済.
Detail of a work
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| R. Yasuda, K. Fukuda, J. Hattori, K. Takeuchi, Y. Gomi, and M. Hashimoto, "Multi-Cell TCAD Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a 12-nm FinFET SRAM," Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV), 採録済. | |
| ID | 705 |
| 分類 | 国際会議 |
| タグ | 12-nm analysis finfet multi-cell multiple-cell parasitic-bipolar-effect-induced sram tcad upsets |
| 表題 (title) |
Multi-Cell TCAD Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a 12-nm FinFET SRAM |
| 表題 (英文) |
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| 著者名 (author) |
Ryuichi Yasuda,Koichi Fukuda,Junichi Hattori,Kozo Takeuchi,Yuibi Gomi, Masanori Hashimoto |
| 英文著者名 (author) |
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| キー (key) |
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| 定期刊行物名 (journal) |
Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV) |
| 定期刊行物名 (英文) |
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| 巻数 (volume) |
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| 号数 (number) |
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| ページ範囲 (pages) |
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| 刊行月 (month) |
0 |
| 出版年 (year) |
(to appear) |
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| 付加情報 (note) |
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| 注釈 (annote) |
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| 内容梗概 (abstract) |
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| 論文電子ファイル | 利用できません． |
| BiBTeXエントリ |
@article{id705,
title = {Multi-Cell {TCAD} Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a {12-nm} {FinFET} {SRAM}},
author = {Ryuichi Yasuda and Koichi Fukuda and Junichi Hattori and Kozo Takeuchi and Yuibi Gomi and Masanori Hashimoto},
journal = {Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV)},
month = {0},
year = {(to appear)},
}
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