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R. Yasuda, K. Fukuda, J. Hattori, K. Takeuchi, K. Takeuchi, and M. Hashimoto, "Multi-Cell TCAD Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a 12-nm FinFET SRAM," Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV), 採録済.
ID 705
分類 国際会議
タグ 12-nm analysis finfet multi-cell multiple-cell parasitic-bipolar-effect-induced sram tcad upsets
表題 (title) Multi-Cell TCAD Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a 12-nm FinFET SRAM
表題 (英文)
著者名 (author) Ryuichi Yasuda, Koichi Fukuda, Junichi Hattori, Kozo Takeuchi, Kozo Takeuchi, Masanori Hashimoto
英文著者名 (author) ,,,,,
キー (key) ,,,,,
定期刊行物名 (journal) Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV)
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刊行月 (month) 0
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BiBTeXエントリ
@article{id705,
         title = {Multi-Cell {TCAD} Analysis of Parasitic-Bipolar-Effect-Induced Multiple-Cell Upsets in a {12-nm} {FinFET} {SRAM}},
        author = {Ryuichi Yasuda and  Koichi Fukuda and  Junichi Hattori and  Kozo Takeuchi and  Kozo Takeuchi and  Masanori Hashimoto},
       journal = {Proceedings of International Conference on Integrated Circuits, Design and Verification (ICDV)},
         month = {0},
          year = {(to appear)},
}